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Ultra low on- resistance 3. The devices are available in a variety of surface mount and through- hole packages with industry standard footprints for ease of design. Eps created date: 2: 06: 04 pm. Irfz48 detalles de producto description advanced hexfet® power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. Inchange is known for its focus on quality and reliability, and. Com electrical characteristics @ tj = 25° c ( unless otherwise specified) source- drain ratings and characteristics repetitive rating; pulse width limited by max. Inchange semiconductor company limited is a chinese semiconductor company that was founded in 1997. Irfz48 datasheet, irfz48 pdf, irfz48 data sheet, datasheet, data sheet, pdf, international rectifier, 60v single n- channel hexfet power mosfet in a to- 220ab package. Irfz48 datasheet, irfz48 datasheets, irfz48 pdf, irfz48 integrated circuits : philips - n- channel enhancement mode trenchmos transistor, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs and other semiconductors. Features advanced process technology surface- mount ( irfz48s, sihfz48s) low- profile through- hole ( sihfz48l) available • 175 ° c operating temperature fast switching material categorization: for definitions of available compliance please see www.
Irfz48s/ l tape & reel information d2pak world headquarters: 233 kansas st. Irfz48npbf hexfet® power mosfet g vdss = 55v rds( on) = 14m ω id = 64a to- 220ab absolute maximum ratings thermal resistance www. Irfz48 data sheet, alldatasheet, free, databook. Description hexfet power mosfet irfz48n datasheet ( html) - international rectifier irfz48n product details description advanced hexfet® power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. 175° c operating temperature 6. Description power mosfet ( vdss= 60v, rds ( on) = 0. Irfz48zpbf international rectifier ic, datasheet pdf, 12 pages, trans mosfet n- ch si 55v 61a 3pin( 3+ tab) to- 220ab. Description third generation power mosfets from vishay provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost- effectiveness. 018ohm, id= 50* a) irfz48 datasheet ( html) - international rectifier irfz48 product details description advanced hexfet® power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. Junction temperature.
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